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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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659
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.3 mOhms | 2 V | 275 nC | Enhancement | OptiMOS | ||
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4,000
In-stock
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IR / Infineon | MOSFET N-CHANNEL 55 / 60 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 375 A | 1.1 mOhms | 2 V | 275 nC | Enhancement | |||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.3 mOhms | 2 V | 275 nC | Enhancement | OptiMOS | ||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.3 mOhms | 2 V | 275 nC | Enhancement |
