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Package / Case :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPD036N04L G
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RFQ
2,608
In-stock
Infineon Technologies MOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 90 A 3 mOhms 1.2 V 78 nC Enhancement OptiMOS
IXTP120N075T2
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RFQ
34
In-stock
IXYS MOSFET 120 Amps 75V 20 V Through Hole TO-220-3 - 55 C + 175 C Tube   Si N-Channel 75 V 120 A 7.7 mOhms 4 V 78 nC Enhancement TrenchT2
CSD19535KCS
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RFQ
312
In-stock
Texas instruments MOSFET 100V N-CH NexFET Pwr MOSFET 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 50 A 3.4 mOhms 2.7 V 78 nC   NexFET
IPD036N04LGBTMA1
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RFQ
2,460
In-stock
Infineon Technologies MOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 90 A 3 mOhms 1.2 V 78 nC Enhancement OptiMOS
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