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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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105
In-stock
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IXYS | MOSFET 133 Amps 100V 0.0075 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 133 A | 9 mOhms | 5 V | 235 nC | Enhancement | Polar, HiPerFET | ||
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10
In-stock
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IXYS | MOSFET 133 Amps 100V 0.008 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 8 mOhms | 5 V | 235 nC | Enhancement | Polar | ||
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19
In-stock
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IXYS | MOSFET 200 Amps 100V 0.0075 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 7.5 mOhms | 5 V | 235 nC | Enhancement | Polar, HiPerFET |
