- Vgs - Gate-Source Voltage :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,700
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 56 A | 12.3 mOhms | 2 V | 49 nC | Enhancement | OptiMOS | |||
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1,013
In-stock
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Fairchild Semiconductor | MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 56 A | 25 mOhms | Enhancement | UltraFET | |||||
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1,962
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 9.5 mOhms | 1.35 V to 2.35 V | 9.6 nC | Enhancement | ||||
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GET PRICE |
9,830
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 56 A | 12.3 mOhms | 2 V | 49 nC | Enhancement | OptiMOS | ||
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4,000
In-stock
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Infineon Technologies | MOSFET 55V N-CH HEXFET 16mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | |||||
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673
In-stock
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Vishay Semiconductors | MOSFET 60V 60A 100W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 56 A | 0.012 Ohms | 2.5 V | 50 nC | Enhancement | TrenchFET | |||
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VIEW | Fairchild Semiconductor | MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 56 A | 25 mOhms | Enhancement |