- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,085
In-stock
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Fairchild Semiconductor | MOSFET 15A 500V 0.38 Ohm N-Ch SMPS Pwr | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 500 V | 15 A | 330 mOhms | Enhancement | |||||||
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1,110
In-stock
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Fairchild Semiconductor | MOSFET 60V/20V Dual Nch Power Trench MOSFET | 20 V | SMD/SMT | PQFN-12 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 4.5 mOhms | 1.5 V | 49 nC | Enhancement | Power Clip | ||||
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2,311
In-stock
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Fairchild Semiconductor | MOSFET 40V 15A DPAK N-Chnl PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 15 A | 14 mOhms | 2 V | 15 nC | Enhancement | PowerTrench | ||||
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2,080
In-stock
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Vishay Semiconductors | MOSFET 30V 15A 5W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 0.009 Ohms | 1.5 V | 53 nC | Enhancement | TrenchFET | ||||
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2,849
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 105mOhms 22.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 155 mOhms | 22.7 nC | Enhancement | ||||||
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1,055
In-stock
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Vishay Semiconductors | MOSFET 60V 15A 37W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 15 A | 0.036 Ohms | 1.5 V | 15 nC | Enhancement | TrenchFET | ||||
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1,651
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 0.012 Ohm typ., 15 A STripFET F7 Power M... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 15 A | 14 mOhms | 2 V | 17 nC | Enhancement | |||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 15 A | 27 mOhms | 1.5 V | 20 nC | Enhancement | |||||
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GET PRICE |
8,000
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 105mOhms 22.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 155 mOhms | 22.7 nC | Enhancement | |||||
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2,000
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 115mOhms 29.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 115 mOhms | 29.3 nC | Enhancement | ||||||
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VIEW | Toshiba | MOSFET UMOSVIII 40V 17.8m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 15 A | 13.7 mOhms | 2.5 V | 10 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 55V 19A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 15 A | 64 mOhms | Enhancement | OptiMOS |