- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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16,180
In-stock
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STMicroelectronics | MOSFET N Ch 24V 0.8m 280A Pwr MOSFET | 20 V | SMD/SMT | PowerSO-10 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 24 V | 280 A | 1 MOhms | Enhancement | |||||
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4,918
In-stock
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Toshiba | MOSFET N-Ch 30V 5800pF 81nC 280A 132W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 280 A | 610 uOhms | 1.1 V | Enhancement | |||||
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800
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 280 A | 2 mOhms | 4 V | 160 nC | Enhancement |