- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,533
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 37 A | 27 mOhms | 43.3 nC | Enhancement | |||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 15 A | 27 mOhms | 1.5 V | 20 nC | Enhancement | ||||
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23,500
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 27 mOhms | 2 V | 29 nC | Enhancement | ||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-CHANNEL_55/60V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 27 mOhms | 1.2 V | 24 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 200V 34A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 27 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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699
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 27 mOhms | 1.2 V | 24 nC | Enhancement | OptiMOS |
