- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,122
In-stock
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Fairchild Semiconductor | MOSFET -30V Dual | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 7 A | 23 mOhms | Enhancement | PowerTrench | ||||||
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869
In-stock
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STMicroelectronics | MOSFET N Ch 100V 0.019Ohm 80A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 23 mOhms | Enhancement | |||||||
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636
In-stock
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Fairchild Semiconductor | MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 23 mOhms | Enhancement | |||||||
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760
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | Enhancement | ||||||
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70
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | Enhancement | ||||||
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2,495
In-stock
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Fairchild Semiconductor | MOSFET 20a 60V 0.027 Ohm | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 23 mOhms | Enhancement | |||||||
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VIEW | onsemi | MOSFET Power MOSFET P-Chann -30 V | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 27 A | 23 mOhms | - 2.6 V | 18.5 nC | Enhancement | |||||
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550
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 30A D2PAK-2 | 20 V | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 30 A | 23 mOhms | Enhancement |