- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,539
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 25 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.4 A | 130 mOhms | Enhancement | PowerTrench | ||||||
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3,582
In-stock
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Fairchild Semiconductor | MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 130 mOhms | 3 V | 16 nC | Enhancement | |||||
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5,905
In-stock
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STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 130 mOhms | - 4 V | 6.4 nC | Enhancement | |||||
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2,627
In-stock
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onsemi | MOSFET PFET 60V 15.5A 130R | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 15.5 A | 130 mOhms | - 2 V | 26 nC | Enhancement | |||||
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7,125
In-stock
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onsemi | MOSFET -60V -15.5A P-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 15.5 A | 130 mOhms | Enhancement |