- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 110 A | 3.9 mOhms | 4.5 V | 117 nC | Enhancement | ||||
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925
In-stock
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STMicroelectronics | MOSFET N-channel 40 V 180 A STripFET Pwr MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.15 mOhms | 4.5 V | 404 nC | Enhancement | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-chanl 80 V 33 mOhm typ 90 A Pwr MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 4 mOhms | 4.5 V | 96 nC | Enhancement | ||||
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915
In-stock
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STMicroelectronics | MOSFET N-channel 40 V 180 A STripFET Pwr MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.15 mOhms | 4.5 V | 404 nC | Enhancement | ||||
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213
In-stock
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Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 229 A | 2.4 mOhms | 4.5 V | 137 nC | Enhancement | PowerTrench | |||
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141
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 9.5 mOhms | 4.5 V | 45 nC | Enhancement |
