- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,997
In-stock
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Vishay Semiconductors | MOSFET -12V Vds -60A Id AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 60 A | 4.8 mOhms | - 1.5 V | 150 nC | Enhancement | ||||||
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6,078
In-stock
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Vishay Semiconductors | MOSFET 60V 50A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 50 A | 0.0135 Ohms | - 2.5 V | 150 nC | Enhancement | TrenchFET | ||||
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1,989
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 135 A | 2.8 mOhms | 1.5 V | 150 nC | Enhancement | ||||||
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973
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 103 A | 9.3 mOhms | 2 V | 150 nC | Enhancement | ||||||
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19,630
In-stock
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STMicroelectronics | MOSFET N-channel 80 V, 0.0058 Ohm typ., 110 A, STripFET F6 Powe... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.5 mOhms | 2.5 V to 4.5 V | 150 nC | Enhancement | |||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET P Ch -80Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 32 A | 27.5 mOhms | - 2.5 V | 150 nC | Enhancement | ||||||
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2,402
In-stock
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Vishay Semiconductors | MOSFET 40V 30A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | AEC-Q101 | 1 Channel | Si | P-Channel | - 40 V | - 30 A | 0.008 Ohms | - 2.5 V | 150 nC | Enhancement | TrenchFET | ||||
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800
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 4 V | 150 nC | Enhancement | ||||||
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VIEW | Vishay Semiconductors | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-Reverse-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 97 A | 0.005 Ohms | 1.5 V | 150 nC | Enhancement |