- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,458
In-stock
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IR / Infineon | MOSFET 1 P-CH -150V HEXFET 150mOhms 21nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 27 A | 150 mOhms | 21 nC | Enhancement | |||||
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2,778
In-stock
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IR / Infineon | MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | Enhancement | |||||
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2,511
In-stock
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Infineon Technologies | MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | - 4 V | 66 nC | Enhancement | ||||
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3,448
In-stock
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Siliconix / Vishay | MOSFET P-Chnl 150-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 0.84 A | 1.3 Ohms | - 3.5 V | 10 nC | Enhancement | TrenchFET | |||
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4,160
In-stock
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Fairchild Semiconductor | MOSFET 150V P-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 90 mOhms | Enhancement | QFET | |||||
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631
In-stock
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Infineon Technologies | MOSFET 1 P-CH -150V HEXFET 290mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | - 2 V to - 4 V | 44 nC | Enhancement | ||||
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246
In-stock
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Infineon Technologies | MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | Enhancement | |||||
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4
In-stock
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IR / Infineon | MOSFET 20V -150V P-CH FET 290mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | 44 nC | Enhancement |
