- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,953
In-stock
|
Fairchild Semiconductor | MOSFET 150V NCh UltraFET Power Trench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 79 A | 16 mOhms | Enhancement | PowerTrench | ||||||
|
492
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 79A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 79 A | 3 mOhms | 47 nC | Enhancement | OptiMOS | |||||
|
882
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Channel QFET Trench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 79 A | 14 mOhms | Enhancement | PowerTrench | ||||||
|
4,984
In-stock
|
Toshiba | MOSFET N-Ch 60V 1440pF 27nC 79A 81W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 79 A | 5.4 mOhms | 1.5 V | 22 nC | Enhancement |