- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,765
In-stock
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Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 36 A | 21 mOhms | - 2.5 V | 100 nC | Enhancement | |||||
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4,160
In-stock
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Fairchild Semiconductor | MOSFET 150V P-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 90 mOhms | Enhancement | QFET | ||||||
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1,262
In-stock
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STMicroelectronics | MOSFET P-channel 40 V, 0.0175 Ohm typ., 36 A STripFET F6 in a D... | +/- 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 36 A | 17.5 mOhms | - 2.5 V | 22 nC | Enhancement | ||||||
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VIEW | Renesas Electronics | MOSFET MP-3ZK PoTr-MOSFET Low | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 36 A | 17 mOhms | Enhancement |