- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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24,412
In-stock
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Vishay Semiconductors | MOSFET 20V 6A 2W AEC-Q101 Qualified | +/- 8 V | SMD/SMT | TO-236-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6 A | 0.024 Ohms | 0.4 V | 8.5 nC | Enhancement | TrenchFET | |||
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3,711
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 6 Amp | 20 V | SMD/SMT | TO-252-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6 A | 220 mOhms | Enhancement | ||||||
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114
In-stock
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onsemi | MOSFET NFET 30V SPCL TR | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6 A | 32 mOhms | Enhancement | ||||||
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9,564
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 6A 9.3nC MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 6 A | 69 mOhms | 1.5 V | 9.3 nC | Enhancement | ||||
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2,500
In-stock
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Fairchild Semiconductor | MOSFET SO8 SINGLE NCH/PCH | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 6 A | 28 mOhms | Enhancement | PowerTrench |
