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Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STP265N6F6AG
1+
$3.090
10+
$2.630
100+
$2.280
250+
$2.160
RFQ
954
In-stock
STMicroelectronics MOSFET POWER MOSFET 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 180 A 2.3 mOhms 2 V 183 nC Enhancement
IXTP180N10T
1+
$3.630
10+
$3.090
100+
$2.680
250+
$2.540
RFQ
58
In-stock
IXYS MOSFET MOSFET Id180 BVdass100   Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 180 A 6.4 mOhms     Enhancement
NDPL180N10BG
1+
$2.880
10+
$2.450
100+
$1.960
500+
$1.720
RFQ
904
In-stock
onsemi MOSFET NCH 180A 100V 20 V Through Hole TO-220-3   + 175 C Tube 1 Channel Si N-Channel 100 V 180 A 3.5 mOhms 2 V 95 nC Enhancement
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