- Manufacture :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,478
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 40mOhms 16.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 28 A | 65 mOhms | 1 V to 2 V | 16.7 nC | Enhancement | |||
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764
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET PWR MOSFET 100mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 150 mOhms | 1 V to 2 V | 22.7 nC | Enhancement | |||
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688
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 60 mOhms | 1 V to 2 V | 16.7 nC | Enhancement | |||
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73
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 10mOhms 65.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 10 mOhms | 1 V to 2 V | 65.3 nC | Enhancement |
