- Mounting Style :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Tradename :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,000
In-stock
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Vishay Semiconductors | MOSFET 40V Vds 60A Id AEC-Q101 Qualified | 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 5 mOhms | 1.5 V | 55 nC | Enhancement | ||||
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1,110
In-stock
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Fairchild Semiconductor | MOSFET 60V/20V Dual Nch Power Trench MOSFET | 20 V | SMD/SMT | PQFN-12 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 4.5 mOhms | 1.5 V | 49 nC | Enhancement | Power Clip | |||
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775
In-stock
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onsemi | MOSFET Pwr MOSFET 30V 30A 10.5mOhm SGL N-CH | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 8.1 mOhms | 1.5 V | 12 nC | Enhancement | ||||
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22
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 600 A | 1.5 mOhms | 1.5 V | 590 nC | Enhancement | HiPerFET | |||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 0.032 Ohms | 1.5 V | 12 nC | Enhancement | ||||
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1,480
In-stock
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onsemi | MOSFET Pwr MOSFET 30V 89A 7mOhm SGL N-CH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 89 A | 4.7 mOhms | 1.5 V | 25.4 nC | Enhancement | ||||
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5,000
In-stock
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Toshiba | MOSFET N-Ch 60V 4180pF 60nC 160A 132W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 1.9 mOhms | 1.5 V | 60 nC | Enhancement | |||||
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4,984
In-stock
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Toshiba | MOSFET N-Ch 60V 1440pF 27nC 79A 81W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 79 A | 5.4 mOhms | 1.5 V | 22 nC | Enhancement | |||||
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1,595
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET 3-DDPAK/TO-2... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 5.1 mOhms | 1.5 V | 44 nC | Enhancement | NexFET | |||
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9,564
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 6A 9.3nC MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 6 A | 69 mOhms | 1.5 V | 9.3 nC | Enhancement | ||||
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95
In-stock
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Texas instruments | MOSFET 60V N-channel NexFET Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.1 mOhms | 1.5 V | 44 nC | Enhancement | NexFET | |||
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218
In-stock
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Toshiba | MOSFET N-Ch 60V 1990pF 29nC 50A 34W | 20 V | Through Hole | TO-220FP-3 | + 175 C | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.1 mOhms | 1.5 V | 28.3 nC | Enhancement | ||||||
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45
In-stock
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Toshiba | MOSFET N-Ch 60V 3280pF 48.2nC 68A 36W | 20 V | Through Hole | TO-220FP-3 | + 175 C | 1 Channel | Si | N-Channel | 60 V | 68 A | 3.3 mOhms | 1.5 V | 48.2 nC | Enhancement | ||||||
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47
In-stock
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Toshiba | MOSFET N-Ch 60V 3280pF 48.2nC 106A 87W | 20 V | Through Hole | TO-220-3 | + 175 C | 1 Channel | Si | N-Channel | 60 V | 106 A | 3.3 mOhms | 1.5 V | 48.2 nC | Enhancement | ||||||
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2,394
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET 8-VSONP -55... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.9 mOhms | 1.5 V | 82 nC | Enhancement | ||||
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1,497
In-stock
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Toshiba | MOSFET U-MOSVIII-H 100V 3.5A 3.2nC MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.5 A | 92 mOhms | 1.5 V | 3.2 nC | Enhancement |
