- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,062
In-stock
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Vishay Semiconductors | MOSFET 60 V 120A 375 W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 0.0028 Ohms | 1.5 V | 330 nC | Enhancement | TrenchFET | |||
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795
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 4.6 mOhms | 1.5 V | 100 nC | Enhancement | ||||
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470
In-stock
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Vishay Semiconductors | MOSFET 55V 110A 158W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 0.0047 Ohms | 1.5 V | 110 nC | Enhancement | TrenchFET | |||
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696
In-stock
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Vishay Semiconductors | MOSFET 100V 100A 375W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 0.007 Ohms | 1.5 V | 185 nC | Enhancement | TrenchFET | |||
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800
In-stock
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Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.21 mOhms | 1.5 V | 230 nC | Enhancement | ||||
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360
In-stock
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Vishay Semiconductors | MOSFET 40V 120A 375W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 0.0014 Ohms | 1.5 V | 285 nC | Enhancement | TrenchFET | |||
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1,595
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET 3-DDPAK/TO-2... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 5.1 mOhms | 1.5 V | 44 nC | Enhancement | NexFET | |||
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798
In-stock
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Vishay Semiconductors | MOSFET 40 V 40A 150W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0025 Ohms | 1.5 V | 130 nC | Enhancement | TrenchFET | |||
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790
In-stock
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Vishay Semiconductors | MOSFET 30V 120A 375W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 120 A | 0.0014 Ohms | 1.5 V | 270 nC | Enhancement | TrenchFET | |||
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800
In-stock
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Vishay Semiconductors | MOSFET 100V 47A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 0.017 Ohms | 1.5 V | 72 nC | Enhancement | TrenchFET | |||
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VIEW | Vishay Semiconductors | MOSFET 60V 119A 175W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 0.0028 Ohms | 1.5 V | 330 nC | Enhancement | TrenchFET | |||
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VIEW | Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 0.0016 Ohms | 1.5 V | 200 nC | Enhancement | ||||
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VIEW | Siliconix / Vishay | MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 20 V | 120 A | 0.0011 Ohms | 1.5 V | 290 nC | Enhancement | ||||
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VIEW | Vishay Semiconductors | MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V, 20 V | 100 A, 100 A | 0.002 Ohms | 1.5 V | 110 nC | Enhancement |
