- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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424
In-stock
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IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 105 A | 10 mOhms | 3 V | 110 nC | Enhancement | |||||
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60
In-stock
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IXYS | MOSFET 110 Amps 100V 0.015 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 15 mOhms | 5 V | 110 nC | Enhancement | PolarHT | ||||
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174
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 122 A | 5 mOhms | 2 V | 110 nC | Enhancement | |||||
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909
In-stock
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IXYS | MOSFET 110 Amps 100V 0.015 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 15 mOhms | 5 V | 110 nC | Enhancement | PolarHT, HiPerFET | ||||
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90
In-stock
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IXYS | MOSFET 96 Amps 150V 0.024 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 96 A | 24 mOhms | 5 V | 110 nC | Enhancement | PolarHT |