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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXTQ110N10P
1+
$5.190
10+
$4.410
100+
$3.830
250+
$3.630
RFQ
60
In-stock
IXYS MOSFET 110 Amps 100V 0.015 Rds 20 V Through Hole TO-3P-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 110 A 15 mOhms 5 V 110 nC Enhancement PolarHT
IRFB3407ZPBF
1+
$1.590
10+
$1.350
100+
$1.080
500+
$0.946
RFQ
174
In-stock
IR / Infineon MOSFET TRENCH_MOSFETS 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 75 V 122 A 5 mOhms 2 V 110 nC Enhancement  
IXFH110N10P
1+
$5.560
10+
$4.730
100+
$4.100
250+
$3.890
RFQ
909
In-stock
IXYS MOSFET 110 Amps 100V 0.015 Rds 20 V Through Hole TO-247-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 110 A 15 mOhms 5 V 110 nC Enhancement PolarHT, HiPerFET
IXTQ96N15P
1+
$4.980
10+
$4.230
100+
$3.670
250+
$3.480
RFQ
90
In-stock
IXYS MOSFET 96 Amps 150V 0.024 Rds 20 V Through Hole TO-3P-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 150 V 96 A 24 mOhms 5 V 110 nC Enhancement PolarHT
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