- Manufacture :
- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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470
In-stock
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Vishay Semiconductors | MOSFET 55V 110A 158W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 0.0047 Ohms | 1.5 V | 110 nC | Enhancement | TrenchFET | |||
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VIEW | Vishay Semiconductors | MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V, 20 V | 100 A, 100 A | 0.002 Ohms | 1.5 V | 110 nC | Enhancement | ||||
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960
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.9 mOhms | 1.2 V | 110 nC | Enhancement | ||||
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211
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.9 mOhms | 1.2 V | 110 nC | Enhancement | OptiMOS |
