- Vgs - Gate-Source Voltage :
- Mounting Style :
- Transistor Polarity :
- Tradename :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,990
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 60V PowerPAK SO-8L | +/- 20 V | SMD/SMT | PowerPAK-SO-8L | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 23 A | 0.0272 Ohms | 1.5 V | 30 nC | Enhancement | ||||
|
|
4,416
In-stock
|
Fairchild Semiconductor | MOSFET 40/20V 550A NChnl LL Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.3 mOhms | 1 V | 30 nC | Enhancement | ||||
|
|
16,630
In-stock
|
Vishay Semiconductors | MOSFET 60V 12A 6.8W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 0.017 Ohms | 1.5 V | 30 nC | Enhancement | TrenchFET | |||
|
|
1,852
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 73A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 73 A | 11 mOhms | 2.2 V | 30 nC | Enhancement | ||||
|
|
1,571
In-stock
|
STMicroelectronics | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | ||||
|
|
2,043
In-stock
|
onsemi | MOSFET NFET 60V 20A 46MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 37.5 mOhms | 2 V | 30 nC | Enhancement | ||||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 26 A | 22 mOhms | 1.5 V | 30 nC | Enhancement | ||||
|
|
2,395
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 50 A | 11.2 mOhms | 2 V | 30 nC | Enhancement | ||||
|
|
825
In-stock
|
Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 95mOhms 30nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 24 A | 82 mOhms | 5 V | 30 nC | Enhancement | ||||
|
|
713
In-stock
|
STMicroelectronics | MOSFET | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 46 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | ||||
|
|
311
In-stock
|
STMicroelectronics | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | ||||
|
|
GET PRICE |
13,930
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2 | - 16 V, + 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 6.2 mOhms | 1.2 V | 30 nC | Enhancement | |||
|
|
115
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 35 A | 25 mOhms | - 2.5 V | 30 nC | Enhancement | ||||
|
|
4,132
In-stock
|
Vishay Semiconductors | MOSFET 60V 24A 45W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 24 A | 0.019 Ohms | 1.5 V | 30 nC | Enhancement | TrenchFET | |||
|
|
GET PRICE |
12,620
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 5 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
2,488
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9.6 mOhms | 1.7 V | 30 nC | Enhancement | |||
|
|
2,875
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 116A 3.4MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 127 A | 2.3 mOhms | 1.3 V | 30 nC | Enhancement | ||||
|
|
VIEW | Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 50 A | 11.2 mOhms | 2 V | 30 nC | Enhancement | ||||
|
|
VIEW | IR / Infineon | MOSFET 40V 1 N-CH HEXFET 9mOhms 30nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 77 A | 9 mOhms | 4 V | 30 nC | Enhancement |
