- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,383
In-stock
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Fairchild Semiconductor | MOSFET 40V 80A Power56 N-Chnl PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3 mOhms | 2 V | 71 nC | Enhancement | PowerTrench | ||||
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815
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 150V 86A D2PAK | 30 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 86 A | 11.7 mOhms | 3 V | 71 nC | Enhancement | |||||
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800
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 85 A | 15 mOhms | 5 V | 71 nC | Enhancement | |||||
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22
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 9.4mOhms 71nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 89 A | 9.4 mOhms | 2 V to 4 V | 71 nC | Enhancement |