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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IPB037N06N3 G	1+ $1.620 10+ $1.380 100+ $1.060 500+ $0.935 1000+ $0.738		PDF RFQ	1,128 In-stock	Infineon Technologies	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	60 V	90 A	3 mOhms	2 V	98 nC	Enhancement	OptiMOS
	IPB037N06N3GATMA1	1+ $1.620 10+ $1.380 100+ $1.060 500+ $0.935 1000+ $0.738		PDF RFQ	1,000 In-stock	Infineon Technologies	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	60 V	90 A	3 mOhms	2 V	98 nC	Enhancement	OptiMOS
	CSD19535KTT	1+ $3.080 10+ $2.770 25+ $2.660 100+ $2.270 500+ $1.930		PDF RFQ	3,990 In-stock	Texas instruments	MOSFET 100V N-CH NexFET Pwr MOSFET	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	100 V	150 A	2.8 mOhms	2.2 V	98 nC	Enhancement

IPB037N06N3 G

IPB037N06N3 G

Infineon Technologies

MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3

Stock : 1,128

1+: $1.620

10+: $1.380

100+: $1.060

500+: $0.935

1000+: $0.738

IPB037N06N3GATMA1

IPB037N06N3GATMA1

Infineon Technologies

MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3

Stock : 1,000

1+: $1.620

10+: $1.380

100+: $1.060

500+: $0.935

1000+: $0.738

CSD19535KTT

CSD19535KTT

Texas instruments

MOSFET 100V N-CH NexFET Pwr MOSFET

Stock : 3,990

1+: $3.080

10+: $2.770

25+: $2.660

100+: $2.270

500+: $1.930

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