- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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675
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 180 A | 700 mOhms | 1 V | 227 nC | Enhancement | OptiMOS | |||
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238
In-stock
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IR / Infineon | MOSFET N-CHANNEL 100+ | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 171 A | 4.8 mOhms | 3 V | 227 nC | Enhancement | ||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 180 A | 700 mOhms | 1 V | 227 nC | Enhancement | OptiMOS |
