- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Id - Continuous Drain Current :
-
- 110 A (1)
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- 192 A (2)
- 195 A (4)
- 197 A (1)
- 208 A (3)
- 240 A (1)
- 246 A (1)
- 250 A (2)
- 254 A (2)
- 295 A (1)
- 298 A (2)
- 305 A (1)
- 317 A (1)
- 320 A (1)
- 414 A (1)
- 426 A (1)
- 478 A (1)
- 522 A (1)
- 557 A (1)
- 564 A (1)
- 58 A (1)
- 60 A (1)
- 62 A (1)
- 63 A (1)
- 71 A (1)
- 80 A (1)
- 85 A (1)
- 86 A (1)
- 87 A (1)
- 90 A (2)
- 95 A (1)
- 97 A (1)
- Rds On - Drain-Source Resistance :
-
- 1.25 mOhms (1)
- 1.4 mOhms (1)
- 1.6 mOhms (4)
- 1.8 mOhms (4)
- 10.7 mOhms (1)
- 11.1 mOhms (1)
- 170 mOhms (1)
- 2 mOhms (1)
- 2.2 mOhms (1)
- 2.4 mOhms (4)
- 2.5 mOhms (5)
- 2.6 mOhms (5)
- 2.7 mOhms (1)
- 3 mOhms (1)
- 3.05 mOhms (1)
- 3.5 mOhms (3)
- 3.6 mOhms (1)
- 4 mOhms (1)
- 4.2 mOhms (3)
- 5.6 mOhms (1)
- 500 uOhms (1)
- 6.6 mOhms (1)
- 600 uOhms (1)
- 7.2 mOhms (2)
- 7.3 mOhms (1)
- 750 Ohms (1)
- 8 mOhms (1)
- 8.4 mOhms (2)
- 970 mOhms (1)
- 970 uOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 116 nC (1)
- 130 nC (2)
- 134 nC (1)
- 135 nC (3)
- 15.3 nC (1)
- 150 nC (1)
- 170 nC (4)
- 172 nC (1)
- 180 nC (6)
- 216 nC (1)
- 220 nC (1)
- 225 nC (3)
- 267 nC (1)
- 271 nC (3)
- 285 nC (1)
- 305 nC (1)
- 307 nC (1)
- 324 nC (1)
- 40 nC (1)
- 44 nC (1)
- 460 nC (1)
- 54 nC (3)
- 56 nC (1)
- 58 nC (1)
- 65 nC (1)
- 68 nC (2)
- 830 nC (1)
- 84 nC (1)
- 85 nC (1)
- 87 nC (1)
- 89 nC (1)
- 90 nC (1)
- 91 nC (2)
- 93 nC (1)
53 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
933
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | D2PAK-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 557 A | 500 uOhms | 1 V | 307 nC | Enhancement | StrongIRFET | ||||
|
|
100
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | D2PAK-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 478 A | 600 uOhms | 1 V | 267 nC | Enhancement | StrongIRFET | ||||
|
|
5,263
In-stock
|
IR / Infineon | MOSFET 40V, 375A, .59 mOhm 220 nC Qg, Logic Lvl | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 564 A | 970 uOhms | 1 V | 220 nC | Enhancement | StrongIRFET | |||
|
|
GET PRICE |
13,472
In-stock
|
Infineon Technologies | MOSFET 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 414 A | 1.6 mOhms | 1 V | 180 nC | Enhancement | StrongIRFET | ||
|
|
2,375
In-stock
|
IR / Infineon | MOSFET 40V StrongIRFET 240A, .75mOhm,305nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 522 A | 750 Ohms | 3 V | 305 nC | Enhancement | StrongIRFET | |||
|
|
GET PRICE |
14,250
In-stock
|
IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | ||
|
|
39,600
In-stock
|
Infineon Technologies | MOSFET 40V 90A 2.5mOhm 89nC StrongIRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.4 mOhms | 2.2 V to 3.9 V | 89 nC | Enhancement | StrongIRFET | |||
|
|
2,178
In-stock
|
Infineon Technologies | MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 305 A | 2.2 mOhms | 1 V | 172 nC | Enhancement | StrongIRFET | |||
|
|
2,684
In-stock
|
IR / Infineon | MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 135 V | 129 A | 8.4 mOhms | 2 V | 180 nC | Enhancement | StrongIRFET | |||
|
|
2,775
In-stock
|
Infineon Technologies | MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 164 A | 3.5 mOhms | 1 V | 56 nC | Enhancement | StrongIRFET | |||
|
|
1,165
In-stock
|
Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | |||
|
|
1,767
In-stock
|
IR / Infineon | MOSFET 40V 195A 1.5mOhm 150nC StrongIRFET | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 295 A | 1.4 mOhms | 3.9 V | 225 nC | Enhancement | StrongIRFET | ||||
|
|
706
In-stock
|
Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | |||
|
|
2,846
In-stock
|
IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | |||
|
|
1,550
In-stock
|
IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | |||
|
|
GET PRICE |
8,625
In-stock
|
IR / Infineon | MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 135 V | 129 A | 8.4 mOhms | 2 V | 180 nC | Enhancement | StrongIRFET | ||
|
|
2,566
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 87 A | 7.2 mOhms | 3.7 V | 84 nC | Enhancement | StrongIRFET | |||
|
|
2,326
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 95 A | 3.6 mOhms | 2.2 V | 68 nC | Enhancement | StrongIRFET | |||
|
|
1,709
In-stock
|
IR / Infineon | MOSFET 60V, 60A, 9.0 mOhm 44 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 7.3 mOhms | 2.1 V | 44 nC | Enhancement | StrongIRFET | |||
|
|
2,341
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 12 A | 170 mOhms | 3 V | 15.3 nC | Enhancement | StrongIRFET | |||
|
|
759
In-stock
|
IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | |||
|
|
256
In-stock
|
Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 195 A | 1.8 mOhms | 3.7 V | 830 nC | Enhancement | StrongIRFET | |||
|
|
2,709
In-stock
|
Infineon Technologies | MOSFET MOSFET N-CH 40V 56A DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 3 mOhms | 3 V | 65 nC | Enhancement | StrongIRFET | |||
|
|
686
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET Power | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 195 A | 2.6 mOhms | 3.7 V | 271 nC | Enhancement | StrongIRFET | |||
|
|
1,771
In-stock
|
IR / Infineon | MOSFET 60V, 58A, 9.9 mOhm 40 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 58 A | 8 mOhms | 2.1 V | 40 nC | Enhancement | StrongIRFET | |||
|
|
2,000
In-stock
|
IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 2.5 mOhms | 1.35 V | 54 nC | Enhancement | StrongIRFET | |||
|
|
734
In-stock
|
IR / Infineon | MOSFET HEXFET Power MOSFET 40V Single N-Channel | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 426 A | 970 mOhms | 2.2 V | 460 nC | Enhancement | StrongIRFET | |||
|
|
668
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 197 A | 3.05 mOhms | 3.7 V | 180 nC | Enhancement | StrongIRFET | |||
|
|
800
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 246 A | 2.6 mOhms | 3.7 V | 271 nC | Enhancement | StrongIRFET | |||
|
|
331
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 7.2 mOhms | 2 V | 116 nC | Enhancement | StrongIRFET |
