- Manufacture :
- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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128,001
In-stock
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Siliconix / Vishay | MOSFET 60V 2.3A 2watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.3 A | 0.125 Ohms | 1.5 V | 5.3 nC | Enhancement | TrenchFET | |||
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12,192
In-stock
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Siliconix / Vishay | MOSFET P-Channel 20V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.9 A | 0.08 Ohms | - 1.5 V | 8 nC | Enhancement | TrenchFET | |||
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8,521
In-stock
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Vishay Semiconductors | MOSFET N-Channel 60V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.3 A | 0.057 Ohms | 1.5 V | 12 nC | Enhancement | TrenchFET | |||
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17,310
In-stock
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Siliconix / Vishay | MOSFET P-Channel 80V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 2.2 A | 0.241 Ohms | - 2.5 V | 18 nC | Enhancement | TrenchFET | |||
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11,930
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 0.24 Ohms | 2.5 V | 3.4 nC | Enhancement | ||||
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12,500
In-stock
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Vishay Semiconductors | MOSFET 30V 8A 3W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 0.02 Ohms | 1.5 V | 14.5 nC | Enhancement | TrenchFET | |||
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3,448
In-stock
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Siliconix / Vishay | MOSFET P-Chnl 150-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 0.84 A | 1.3 Ohms | - 3.5 V | 10 nC | Enhancement | TrenchFET | |||
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3,692
In-stock
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Vishay Semiconductors | MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.8 A | 0.13 Ohms | - 2.5 V | 15 nC | Enhancement | TrenchFET | |||
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2,403
In-stock
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Vishay Semiconductors | MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 4.1 A | 0.084 Ohms | - 2.5 V | 12 nC | Enhancement | TrenchFET | |||
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648
In-stock
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Siliconix / Vishay | MOSFET P-Channel 12V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5 A | 0.042 Ohms | - 1 V | 13 nC | Enhancement | TrenchFET | |||
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2,726
In-stock
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Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.8 A | 0.13 Ohms | - 2.5 V | 12 nC | Enhancement | ||||
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2,969
In-stock
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Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 0.026 Ohms | 1.5 V | 13 nC | Enhancement | TrenchFET | |||
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9,564
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 6A 9.3nC MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 6 A | 69 mOhms | 1.5 V | 9.3 nC | Enhancement | ||||
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14,982
In-stock
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Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.5 A | 0.13 Ohms | - 2.5 V | 6.8 nC | Enhancement | TrenchFET | |||
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1,497
In-stock
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Toshiba | MOSFET U-MOSVIII-H 100V 3.5A 3.2nC MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.5 A | 92 mOhms | 1.5 V | 3.2 nC | Enhancement |
