- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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555
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 480 A | 1.5 mOhms | 5 V | 545 nC | Enhancement | HiPerFET | |||
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320
In-stock
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 420 A | 2.3 mOhms | 5 V | 670 nC | Enhancement | HiPerFET | |||||
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168
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 310 A | 4 mOhms | HiPerFET | |||||||
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98
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 170 V | 260 A | 5.2 mOhms | 5 V | 640 nC | Enhancement | HiPerFET | |||
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8
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | Si | N-Channel | 150 V | 240 A | 5.2 mOhms | 460 nC | Enhancement | HiPerFET |
