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10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,703
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 2.3mOhms 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 160 A | 1.8 mOhms | 200 nC | Enhancement | Directfet | ||||
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2,457
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 1.5mOhms 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 1.1 mOhms | 200 nC | Enhancement | Directfet | ||||
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3,580
In-stock
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IR / Infineon | MOSFET 100V DIGITAL AUDIO 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-SB | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 51 mOhms | 8.3 nC | Enhancement | Directfet | ||||
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2,906
In-stock
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Infineon Technologies | MOSFET 60V N-Ch 139A 2.15 mOhm 147nC | 20 V | SMD/SMT | DirectFET-L6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 148 A | 1.7 mOhms | 2.9 V | 146 nC | Directfet | ||||
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346
In-stock
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IR / Infineon | MOSFET 100V N-CH 142A 3.5 mOhm 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 2.8 mOhms | 2 V | 200 nC | Enhancement | Directfet | |||
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4,000
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 67 A | 9 mOhms | 97 nC | Enhancement | Directfet | ||||
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4,000
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET DIRECTFET L8 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 2.8 mOhms | 200 nC | Enhancement | Directfet | ||||
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4,000
In-stock
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IR / Infineon | MOSFET 40V N-Ch 270A 1.0 mOhm 220nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 700 uOhms | 2.8 V | 220 nC | Directfet | ||||
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VIEW | Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 1mOhm 220nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 700 Ohms | 220 nC | Enhancement | Directfet | |||||
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3,890
In-stock
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IR / Infineon | MOSFET 250V N-CH HEXFET 38mOhms 110nC | 30 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 35 A | 32 mOhms | 110 nC | Enhancement | Directfet |