- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,000
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 56 mOhms | 5.5 V | 60 nC | Enhancement | ||||
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384
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | |||||
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GET PRICE |
8,500
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 44A 54mOhm 60nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | ||||
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272
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 60 nC | Enhancement | |||||
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376
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 5 V | 60 nC | Enhancement | ||||
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169
In-stock
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IR / Infineon | MOSFET MOSFT 150V 60A 32mOhm 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 60 nC | Enhancement | |||||
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250
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 44 A | 32 mOhms | 60 nC | Enhancement | |||||
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238
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 30 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 48 Amps 200V 50 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 48 A | 50 mOhms | 4.5 V | 60 nC | Enhancement | Trench | |||
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3
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 56 mOhms | 60 nC | Enhancement |