- Manufacture :
- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
54,053
In-stock
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Vishay Semiconductors | MOSFET 60V -1.7A 2W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-236-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.7 A | 0.268 Ohms | - 2.5 V | 8.5 nC | Enhancement | TrenchFET | ||
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GET PRICE |
24,412
In-stock
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Vishay Semiconductors | MOSFET 20V 6A 2W AEC-Q101 Qualified | +/- 8 V | SMD/SMT | TO-236-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6 A | 0.024 Ohms | 0.4 V | 8.5 nC | Enhancement | TrenchFET | ||
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GET PRICE |
5,962
In-stock
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Siliconix / Vishay | MOSFET P-Channel 20V AEC-Q101 Qualified | +/- 12 V | SMD/SMT | TO-236-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 0.08 Ohms | - 1.5 V | 5.5 nC | Enhancement | TrenchFET |
