- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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490
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Siliconix / Vishay | MOSFET N-Channel 200V TO-220 | +/- 20 V | Through Hole | TO-220AB-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 200 V | 64 A | 0.018 Ohms | 2 V | 48 nC | Enhancement | ||||
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VIEW | Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220AB-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 100 A | 0.0072 Ohms | - 2.5 V | 300 nC | Enhancement | ||||
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VIEW | Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220AB-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 119 A | 0.0045 Ohms | 2.5 V | 145 nC | Enhancement | ||||
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VIEW | Siliconix / Vishay | MOSFET N-Chnl 100-V (D-S) AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220AB-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.0079 Ohms | 2.5 V | 180 nC | Enhancement | TrenchFET | ||||
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VIEW | Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220AB-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 120 A | 0.0056 Ohms | - 2.5 V | 270 nC | Enhancement |
