- Minimum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
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- 80 A (4)
- 85 A (1)
- 99 A (1)
- Rds On - Drain-Source Resistance :
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- 0.003 Ohms (1)
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- 77.5 mOhms (1)
- 8 mOhms (1)
- 8.4 mOhms (1)
- 970 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 100 nC (1)
- 107 nC (1)
- 120 nC (2)
- 135 nC (1)
- 14 nC, 107 nC (1)
- 150 nC (2)
- 170 nC (2)
- 180 nC (1)
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- 216 nC (2)
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- 24 nC (1)
- 25 nC (1)
- 271 nC (1)
- 300 nC (1)
- 42 nC (1)
- 43 nC (1)
- 44.7 nC (1)
- 460 nC (1)
- 48 nC (1)
- 54 nC (1)
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- 62 nC (1)
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- 73 nC (1)
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- 82 nC (1)
- 85 nC (1)
- Applied Filters :
45 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
786
In-stock
|
Fairchild Semiconductor | MOSFET NCH 60V 3.0Mohm | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 193 A | 3.2 mOhms | PowerTrench | ||||||
|
|
GET PRICE |
3,200
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement | ||||
|
|
GET PRICE |
1,816
In-stock
|
Infineon Technologies | MOSFET MOSFET, 100V, 64A, 1 50 nC Qg, TO-262 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 4 V | 58 nC | Enhancement | |||
|
|
GET PRICE |
2,976
In-stock
|
STMicroelectronics | MOSFET N-Ch 30 Volt 100 Amp | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 100 A | 3.2 mOhms | Enhancement | |||||
|
|
GET PRICE |
706
In-stock
|
Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | ||
|
|
GET PRICE |
435
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 4 V | 54 nC | Enhancement | |||
|
|
GET PRICE |
815
In-stock
|
STMicroelectronics | MOSFET N-Ch, 55V-0.005ohms 80A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 80 A | 6.5 mOhms | Enhancement | |||||
|
|
GET PRICE |
734
In-stock
|
IR / Infineon | MOSFET HEXFET Power MOSFET 40V Single N-Channel | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 426 A | 970 mOhms | 2.2 V | 460 nC | Enhancement | StrongIRFET | ||
|
|
GET PRICE |
440
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 99 A | 10.3 mOhms | 3 V | 120 nC | Enhancement | |||
|
|
GET PRICE |
800
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 246 A | 2.6 mOhms | 3.7 V | 271 nC | Enhancement | StrongIRFET | ||
|
|
GET PRICE |
980
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 22 mOhms | Enhancement | |||||
|
|
GET PRICE |
340
In-stock
|
Fairchild Semiconductor | MOSFET TO-262 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 56 A | 25 mOhms | Enhancement | UltraFET | ||||
|
|
GET PRICE |
410
In-stock
|
Fairchild Semiconductor | MOSFET 40V, 110A, 2.2m Ohm NChannel PowerTrench | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 110 A | 2.2 Ohms | 2.83 V | 14 nC, 107 nC | PowerTrench | |||
|
|
GET PRICE |
463
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 6.4 mOhms | 2 V | 43 nC | Enhancement | PowerTrench | ||
|
|
GET PRICE |
215
In-stock
|
Infineon Technologies | MOSFET Auto Q101 -55V P-Ch HEXFET Power MOSFET | 20 V | Through Hole | TO-262-3 | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | 120 nC | ||||||
|
|
GET PRICE |
200
In-stock
|
IR / Infineon | MOSFET MOSFT 200V 76A 23.2mOhm 100nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 22 mOhms | 100 nC | Enhancement | ||||
|
|
GET PRICE |
238
In-stock
|
IR / Infineon | MOSFET PLANAR_MOSFETS | 30 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | ||||
|
|
GET PRICE |
679
In-stock
|
Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.5 mOhms | 3 V | 24 nC | ||||
|
|
GET PRICE |
280
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | ||
|
|
GET PRICE |
482
In-stock
|
IR / Infineon | MOSFET MOSFET_(120V,300V)_47 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 19 A | 145 mOhms | 3 V | 57 nC | Enhancement | |||
|
|
GET PRICE |
275
In-stock
|
IR / Infineon | MOSFET 40V 295A 1.8mOhm Automotive MOSFET | Through Hole | TO-262-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 295 A | 1.8 mOhms | 150 nC | |||||||
|
|
GET PRICE |
174
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 1.9mOhm 120A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.3 mOhms | 2.2 V to 3.9 V | 107 nC | Enhancement | CoolIRFet | ||
|
|
GET PRICE |
590
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 76 A | 8.4 mOhms | 3.7 V | 73 nC | StrongIRFET | |||
|
|
GET PRICE |
219
In-stock
|
IR / Infineon | MOSFET 40V, 120A, 2.5 mOhm 90 nC Qg, TO-262 | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 208 A | 2.5 mOhms | 3.9 V | 135 nC | Enhancement | StrongIRFET | |||
|
|
GET PRICE |
81
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | Enhancement | ||||
|
|
GET PRICE |
53
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 18A 150mOhm 44.7nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 150 mOhms | 44.7 nC | Enhancement | ||||
|
|
GET PRICE |
91
In-stock
|
IR / Infineon | MOSFET 55V, 53A, 16.5mOhm Automotive MOSFET | Through Hole | TO-262-3 | + 175 C | Tube | Si | N-Channel | 55 V | 53 A | 16.5 mOhms | 48 nC | ||||||||
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|
GET PRICE |
100
In-stock
|
IR / Infineon | MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, TO-262 | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 250 A | 1.8 mOhms | 3.9 V | 225 nC | Enhancement | StrongIRFET | |||
|
|
GET PRICE |
25
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 2.6mOhm 123A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 123 A | 3.3 mOhms | 2.2 V to 3.9 V | 62 nC | Enhancement | CoolIRFet | ||
|
|
GET PRICE |
3,200
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 6.5mOhms 76nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 4 V | 76 nC | Enhancement |
