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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
TPN1R603PL,L1Q
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RFQ
333
In-stock
Toshiba MOSFET N-Ch 30V 2970pF 41nC 33A 30W 20 V SMD/SMT TSON-Advance-8   + 175 C Reel 1 Channel Si N-Channel 30 V 188 A 1.2 mOhms 1.1 V 41 nC Enhancement
TPN3R704PL,L1Q
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RFQ
14,788
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Toshiba MOSFET 40 Volt N-Channel 20 V SMD/SMT TSON-Advance-8 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 80 A 6 mOhms 1.4 V 27 nC Enhancement
TPN2R304PL,L1Q
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RFQ
690
In-stock
Toshiba MOSFET 40 Volt N-Channel 20 V SMD/SMT TSON-Advance-8 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 80 A 4 mOhms 1.4 V 41 nC Enhancement
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