- Vgs - Gate-Source Voltage :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 0.0035 Ohms (1)
- 0.0037 Ohms (1)
- 0.005 Ohms (1)
- 0.0052 Ohms, 0.0025 Ohms (1)
- 0.0064 Ohms (1)
- 0.007 Ohms (2)
- 0.0072 Ohms (1)
- 0.0074 Ohms, 0.0031 Ohms (1)
- 0.009 Ohms (1)
- 0.012 Ohms, 0.012 Ohms (1)
- 0.014 Ohms (1)
- 0.0155 Ohms (1)
- 0.0176 Ohms (1)
- 0.018 Ohms, 0.009 Ohms (1)
- 0.022 Ohms (1)
- 0.0223 Ohms, 0.0223 Ohms (1)
- 0.024 Ohms (1)
- 10 mOhms, 10 mOhms (1)
- 10.5 mOhms, 10.5 mOhms (1)
- 11 mOhms (2)
- 17.9 mOhms, 17.9 mOhms (1)
- 2.45 mOhms (1)
- 2.6 mOhms (1)
- 21 mOhms (1)
- 21 mOhms, 21 mOhms (1)
- 22 mOhms (2)
- 27 mOhms (1)
- 27 mOhms, 27 mOhms (1)
- 27.5 mOhms (1)
- 30 mOhms (1)
- 32.5 mOhms, 15.4 mOhms (1)
- 36.5 mOhms, 118.4 mOhms (1)
- 5.8 mOhms (1)
- 6.3 mOhms, 6.3 mOhms (1)
- 6.8 mOhms (1)
- 7 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 100 nC (1)
- 105 nC (1)
- 106 nC (1)
- 108 nC (2)
- 109 nC (1)
- 110 nC (1)
- 130 nC (1)
- 15 nC, 20 nC (1)
- 15 nC, 30 nC (1)
- 150 nC (1)
- 164 nC (3)
- 18 nC, 43 nC (1)
- 19.7 nC, 33.8 nC (1)
- 20 nC (3)
- 20 nC, 20 nC (1)
- 22 nC, 54 nC (1)
- 25 nC, 25 nC (1)
- 27 nC (1)
- 30 nC (1)
- 30 nC, 30 nC (4)
- 34 nC (1)
- 35 nC (1)
- 35 nC, 35 nC (2)
- 44 nC (1)
- 51 nC (1)
- 57 nC (1)
- 60 nC (1)
- 65 nC (1)
- 75 nC (1)
- 80 nC (1)
39 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,938
In-stock
|
Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 52 A | 0.0155 Ohms | - 2.5 V | 108 nC | Enhancement | ||||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 12V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 32 A | 0.005 Ohms | - 1.5 V | 164 nC | Enhancement | TrenchFET | |||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 30 A | 7 mOhms | - 2.5 V | 164 nC | Enhancement | ||||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET Dual N-Ch 100V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 17 A, 34 A | 32.5 mOhms, 15.4 mOhms | 1.5 V, 1.5 V | 15 nC, 30 nC | Enhancement | ||||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 2.6 mOhms | 1.5 V | 80 nC | Enhancement | ||||
|
|
2,600
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 75V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 0.022 Ohms | 1.1 V | 34 nC | Enhancement | TrenchFET | |||
|
|
2,105
In-stock
|
Siliconix / Vishay | MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 32 A | 0.014 Ohms | 1.5 V | 44 nC | Enhancement | TrenchFET | |||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 26 A | 22 mOhms | 1.5 V | 30 nC | Enhancement | ||||
|
|
2,765
In-stock
|
Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 36 A | 21 mOhms | - 2.5 V | 100 nC | Enhancement | ||||
|
|
2,985
In-stock
|
Siliconix / Vishay | MOSFET 40V 15A AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 15 A, 45 A | 0.018 Ohms, 0.009 Ohms | 1.3 V, 1.3 V | 19.7 nC, 33.8 nC | Enhancement | TrenchFET | |||
|
|
2,610
In-stock
|
Siliconix / Vishay | MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 12 V, 12 V | 20 A, 60 A | 0.0052 Ohms, 0.0025 Ohms | 1 V, 1 V | 22 nC, 54 nC | Enhancement | TrenchFET | |||
|
|
2,190
In-stock
|
Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 23 A, 23 A | 0.012 Ohms, 0.012 Ohms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | ||||
|
|
2,923
In-stock
|
Siliconix / Vishay | MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 20 A, 60 A | 0.0074 Ohms, 0.0031 Ohms | 1 V, 1 V | 18 nC, 43 nC | Enhancement | TrenchFET | |||
|
|
2,998
In-stock
|
Siliconix / Vishay | MOSFET N Ch P Ch 100/-100V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 100 V, - 100 V | 15 A, - 9.5 A | 36.5 mOhms, 118.4 mOhms | 1.5 V, - 2.5 V | 15 nC, 20 nC | Enhancement | ||||
|
|
30,000
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 27 A | 22 mOhms | 2.5 V | 20 nC | Enhancement | ||||
|
|
2,980
In-stock
|
Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 15 A, 15 A | 27 mOhms, 27 mOhms | 1.5 V, 1.5 V | 20 nC, 20 nC | Enhancement | ||||
|
|
2,780
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 30 A, 30 A | 21 mOhms, 21 mOhms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | ||||
|
|
2,925
In-stock
|
Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 30 A, 30 A | 10 mOhms, 10 mOhms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | ||||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET P Ch -80Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 32 A | 27.5 mOhms | - 2.5 V | 150 nC | Enhancement | ||||
|
|
1,978
In-stock
|
Siliconix / Vishay | MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 30 A, 30 A | 6.3 mOhms, 6.3 mOhms | 1.2 V, 1.2 V | 35 nC, 35 nC | Enhancement | ||||
|
|
2,848
In-stock
|
Siliconix / Vishay | MOSFET N-Ch 60V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 30 A, 30 A | 10.5 mOhms, 10.5 mOhms | 2.5 V, 2.5 V | 35 nC, 35 nC | Enhancement | ||||
|
|
1,085
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 40 A | 0.024 Ohms | - 2.5 V | 57 nC | Enhancement | TrenchFET | |||
|
|
900
In-stock
|
Siliconix / Vishay | MOSFET 100V 32A 27watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 0.009 Ohms | 1.5 V | 51 nC | Enhancement | TrenchFET | |||
|
|
2,495
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 23 A | 30 mOhms | 1.5 V | 20 nC | Enhancement | ||||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 15 A | 27 mOhms | 1.5 V | 20 nC | Enhancement | ||||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 80V PowerPAK SO-8L | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 60 A | 5.8 mOhms | 1.5 V | 75 nC | Enhancement | ||||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 2.45 mOhms | 2.5 V | 105 nC | Enhancement | ||||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET Dual N-Ch 80V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 80 V, 80 V | 30 A, 30 A | 17.9 mOhms, 17.9 mOhms | 2.5 V, 2.5 V | 25 nC, 25 nC | Enhancement | ||||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 55 A | 11 mOhms | - 2.5 V | 130 nC | Enhancement | ||||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 48 A | 11 mOhms | 2.5 V | 35 nC | Enhancement |
