- Manufacture :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,600
In-stock
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Siliconix / Vishay | MOSFET N-Channel 75V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 0.022 Ohms | 1.1 V | 34 nC | Enhancement | TrenchFET | |||
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3,000
In-stock
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Vishay Semiconductors | MOSFET 60V Vds 30A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 10.5 mOhms | 2.5 V | 35 nC | Enhancement | ||||
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3,000
In-stock
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Vishay Semiconductors | MOSFET 80V Vds 30A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 30 A | 17.9 mOhms | 2.5 V | 25 nC | Enhancement | ||||
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3,000
In-stock
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Vishay Semiconductors | MOSFET 80V Vds 30A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 30 A | 15.5 mOhms | 1.5 V | 32 nC | Enhancement | ||||
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3,000
In-stock
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Vishay Semiconductors | MOSFET 30V 30A 46W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 0.0075 Ohms | 1.2 V | 38 nC | Enhancement | TrenchFET |
