- Manufacture :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.0052 Ohms, 0.0025 Ohms (1)
- 0.0058 Ohms, 0.0058 Ohms (1)
- 0.0074 Ohms, 0.0031 Ohms (1)
- 0.0077 Ohms, 0.0077 Ohms (1)
- 0.0077 Ohms, 0.022 Ohms (1)
- 0.012 Ohms, 0.012 Ohms (1)
- 0.0133 Ohms, 0.0053 Ohms (1)
- 0.0138 Ohms, 0.0138 Ohms (1)
- 0.014 Ohms, 0.014 Ohms (1)
- 0.018 Ohms, 0.009 Ohms (1)
- 0.0223 Ohms, 0.0223 Ohms (1)
- 0.028 Ohms, 0.028 Ohms (1)
- 0.03 Ohms, 0.03 Ohms (1)
- 0.041 Ohms, 0.041 Ohms (1)
- 0.047 Ohms, 0.047 Ohms (1)
- 0.067 Ohms, 0.067 Ohms (1)
- 10 mOhms, 10 mOhms (1)
- 10.5 mOhms, 10.5 mOhms (1)
- 15.5 mOhms, 15.5 mOhms (1)
- 17.9 mOhms, 17.9 mOhms (1)
- 21 mOhms, 21 mOhms (1)
- 27 mOhms, 27 mOhms (1)
- 32.5 mOhms, 15.4 mOhms (1)
- 36.5 mOhms, 118.4 mOhms (1)
- 6.3 mOhms, 6.3 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 12 nC, 12 nC (1)
- 15 nC, 20 nC (1)
- 15 nC, 30 nC (1)
- 18 nC, 43 nC (1)
- 18.5 nC, 18.5 nC (1)
- 19.7 nC, 33.8 nC (1)
- 20 nC, 20 nC (2)
- 20 nC, 48 nC (1)
- 21 nC, 21 nC (1)
- 22 nC, 54 nC (1)
- 25 nC, 25 nC (1)
- 26 nC, 26 nC (1)
- 30 nC, 30 nC (4)
- 32 nC, 32 nC (1)
- 35 nC, 35 nC (2)
- 38 nC, 38 nC (1)
- 38.3 nC, 45 nC (1)
- 39 nC, 39 nC (1)
- 40 nC, 40 nC (1)
- 50 nC, 50 nC (1)
25 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,370
In-stock
|
Vishay Semiconductors | MOSFET Dual N-Channel 60V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 23.5 A, 23.5 A | 0.028 Ohms, 0.028 Ohms | 1.5 V, 1.5 V | 18.5 nC, 18.5 nC | Enhancement | TrenchFET | ||||
|
GET PRICE |
9,000
In-stock
|
Vishay Semiconductors | MOSFET 60V 8A 34W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 8 A, 8 A | 0.03 Ohms, 0.03 Ohms | 1.5 V, 1.5 V | 20 nC, 20 nC | Enhancement | TrenchFET | |||
|
2,538
In-stock
|
Vishay Semiconductors | MOSFET N and P Channel 40V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V, - 40 V | 30 A, - 30 A | 0.0077 Ohms, 0.022 Ohms | 1.3 V, - 2.5 V | 38.3 nC, 45 nC | Enhancement | TrenchFET | ||||
|
2,702
In-stock
|
Vishay Semiconductors | MOSFET -60V -8A 27W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 60 V, - 60 V | - 8 A, - 8 A | 0.067 Ohms, 0.067 Ohms | - 2.5 V, - 2.5 V | 40 nC, 40 nC | Enhancement | TrenchFET | ||||
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET Dual N-Ch 100V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 17 A, 34 A | 32.5 mOhms, 15.4 mOhms | 1.5 V, 1.5 V | 15 nC, 30 nC | Enhancement | |||||
|
2,461
In-stock
|
Vishay Semiconductors | MOSFET 40V 30A 48W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 30 A, 30 A | 0.0077 Ohms, 0.0077 Ohms | 1.5 V, 1.5 V | 38 nC, 38 nC | Enhancement | TrenchFET | ||||
|
2,235
In-stock
|
Vishay Semiconductors | MOSFET Dual N-Channel 75V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 75 V, 75 V | 17 A, 17 A | 0.041 Ohms, 0.041 Ohms | 1.5 V, 1.5 V | 21 nC, 21 nC | Enhancement | TrenchFET | ||||
|
2,985
In-stock
|
Siliconix / Vishay | MOSFET 40V 15A AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 15 A, 45 A | 0.018 Ohms, 0.009 Ohms | 1.3 V, 1.3 V | 19.7 nC, 33.8 nC | Enhancement | TrenchFET | ||||
|
2,610
In-stock
|
Siliconix / Vishay | MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 12 V, 12 V | 20 A, 60 A | 0.0052 Ohms, 0.0025 Ohms | 1 V, 1 V | 22 nC, 54 nC | Enhancement | TrenchFET | ||||
|
2,190
In-stock
|
Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 23 A, 23 A | 0.012 Ohms, 0.012 Ohms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | |||||
|
2,923
In-stock
|
Siliconix / Vishay | MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 20 A, 60 A | 0.0074 Ohms, 0.0031 Ohms | 1 V, 1 V | 18 nC, 43 nC | Enhancement | TrenchFET | ||||
|
2,998
In-stock
|
Siliconix / Vishay | MOSFET N Ch P Ch 100/-100V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 100 V, - 100 V | 15 A, - 9.5 A | 36.5 mOhms, 118.4 mOhms | 1.5 V, - 2.5 V | 15 nC, 20 nC | Enhancement | |||||
|
2,980
In-stock
|
Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 15 A, 15 A | 27 mOhms, 27 mOhms | 1.5 V, 1.5 V | 20 nC, 20 nC | Enhancement | |||||
|
2,780
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 30 A, 30 A | 21 mOhms, 21 mOhms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | |||||
|
2,925
In-stock
|
Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 30 A, 30 A | 10 mOhms, 10 mOhms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | |||||
|
1,978
In-stock
|
Siliconix / Vishay | MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 30 A, 30 A | 6.3 mOhms, 6.3 mOhms | 1.2 V, 1.2 V | 35 nC, 35 nC | Enhancement | |||||
|
2,848
In-stock
|
Siliconix / Vishay | MOSFET N-Ch 60V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 30 A, 30 A | 10.5 mOhms, 10.5 mOhms | 2.5 V, 2.5 V | 35 nC, 35 nC | Enhancement | |||||
|
349
In-stock
|
Vishay Semiconductors | MOSFET Dual N-Channel 60V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 15 A, 15 A | 0.047 Ohms, 0.047 Ohms | 1.5 V, 1.5 V | 12 nC, 12 nC | Enhancement | TrenchFET | ||||
|
3,057
In-stock
|
Vishay Semiconductors | MOSFET 40V 15A AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 15 A, 18 A | 0.0133 Ohms, 0.0053 Ohms | 1.5 V, 1.5 V | 20 nC, 48 nC | Enhancement | TrenchFET | ||||
|
3,000
In-stock
|
Vishay Semiconductors | MOSFET Dual P-Channel 30V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 30 A, - 30 A | 0.014 Ohms, 0.014 Ohms | - 2.5 V, - 2.5 V | 50 nC, 50 nC | Enhancement | TrenchFET | ||||
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET Dual N-Ch 80V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 80 V, 80 V | 30 A, 30 A | 17.9 mOhms, 17.9 mOhms | 2.5 V, 2.5 V | 25 nC, 25 nC | Enhancement | |||||
|
3,000
In-stock
|
Vishay Semiconductors | MOSFET 80V Vds 30A Id AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 80 V, 80 V | 30 A, 30 A | 15.5 mOhms, 15.5 mOhms | 1.5 V, 1.5 V | 32 nC, 32 nC | Enhancement | |||||
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VIEW | Vishay Semiconductors | MOSFET Dual N-Channel 30V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 30 A, 30 A | 0.0058 Ohms, 0.0058 Ohms | 1.5 V, 1.5 V | 39 nC, 39 nC | Enhancement | TrenchFET | ||||
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VIEW | Vishay Semiconductors | MOSFET N-Channel 30V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 8 A, 8 A | 0.0138 Ohms, 0.0138 Ohms | 1.5 V, 1.5 V | 26 nC, 26 nC | Enhancement | TrenchFET | ||||
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VIEW | Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 23 A, 23 A | 0.0223 Ohms, 0.0223 Ohms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement |