- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.31 Ohms (1)
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- 18.3 mOhms (2)
- 180 mOhms (3)
- 20 mOhms (5)
- 23.8 mOhms (1)
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- 700 mOhms (2)
- 740 mOhms (4)
- 750 mOhms (9)
- 850 mOhms (1)
- 9.6 mOhms (1)
- 95 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (1)
- 10.5 nC (2)
- 11 nC (2)
- 13 nC (1)
- 130 nC (1)
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- 15 nC (3)
- 16 nC (2)
- 16.5 nC (3)
- 17 nC (7)
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- 19.8 nC (1)
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- 25.1 nC (2)
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- 27 nC (1)
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- 30 nC (3)
- 32 nC (2)
- 36 nC (1)
- 4.7 nC (1)
- 40 nC (3)
- 42 nC (3)
- 45 nC (1)
- 46 nC (2)
- 47 nC (2)
- 49 nC (3)
- 5.6 nC (1)
- 50 nC (4)
- 51 nC (3)
- 56 nC (1)
- 57.4 nC (1)
- 6 nC (1)
- 7 nC (1)
- 7.4 nC (2)
- 8.7 nC (1)
- 9.4 nC (1)
- Channel Mode :
108 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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984
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 10 A | 370 mOhms | 3 V | 16.5 nC | Enhancement | |||||
|
|
908
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 10 A | 370 mOhms | 3 V | 16.5 nC | Enhancement | |||||
|
|
7,116
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | Enhancement | ||||||
|
|
7,868
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 30 nC | Enhancement | |||||
|
|
4,697
In-stock
|
Fairchild Semiconductor | MOSFET Single N-Channel Power Trench Mosfet | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10 A | 18 mOhms | 1.6 V | 14 nC | PowerTrench | |||||
|
|
8,444
In-stock
|
Fairchild Semiconductor | MOSFET Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSF... | 12 V | SMD/SMT | WLCSP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10 A | 13 mOhms | 0.9 V | 17 nC | PowerTrench | ||||
|
|
3,181
In-stock
|
IR / Infineon | MOSFET MOSFT 40V 11A 13mOhm 29nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10 A | 13 mOhms | 2 V | 29 nC | |||||
|
|
3,127
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 N-CH 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 10 A | 14 mOhms | Enhancement | PowerTrench | |||||
|
|
1,990
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Ch MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 610 mOhms | Enhancement | QFET | |||||
|
|
1,458
In-stock
|
STMicroelectronics | MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 750 mOhms | Enhancement | ||||||
|
|
1,535
In-stock
|
Fairchild Semiconductor | MOSFET 800V 10A NChn MOSFET SuperFET II | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 650 mOhms | 2.5 V | 27 nC | Enhancement | SuperFET II | |||
|
|
4,624
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 1 V | 30 nC | Enhancement | ||||
|
|
919
In-stock
|
STMicroelectronics | MOSFET N-channel 600V, 10A FDMesh II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 450 mOhms | Enhancement | ||||||
|
|
3,247
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 14.9 mOhms | 2 V to 4 V | 40 nC | Enhancement | ||||
|
|
4,659
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V Mdmesh 10A | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10 A | 550 mOhms | 19 nC | ||||||
|
|
5,028
In-stock
|
Infineon Technologies | MOSFET 150V SINGLE N-CH 31mOhms 33nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 10 A | 31 mOhms | 3 V to 5 V | 36 nC | Enhancement | ||||
|
|
3,635
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7 | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10 A | 230 mOhms | 3 V to 4 V | 20 nC | Enhancement | CoolMOS | |||
|
|
6,312
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10 A | 370 mOhms | 2 V | 17 nC | Enhancement | |||||
|
|
37,775
In-stock
|
onsemi | MOSFET NCH 2.5V COMMON-DRAIN | 12.5 V | SMD/SMT | ECH-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 24 V | 10 A | 11.6 mOhms | 6 nC | ||||||
|
|
3,714
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | Enhancement | ||||||
|
|
2,913
In-stock
|
Fairchild Semiconductor | MOSFET 30V NCH POWER TRENCH SYNCFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 10 mOhms | Enhancement | PowerTrench SyncFET | |||||
|
|
1,663
In-stock
|
Fairchild Semiconductor | MOSFET 150V NCHAN PwrTrench | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 150 V | 10 A | 60 mOhms | PowerTrench | ||||||||
|
|
1,360
In-stock
|
Fairchild Semiconductor | MOSFET 600N-Channel MOSFET UniFET-II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 640 mOhms | 5 V | 23 nC | UniFET | ||||
|
|
753
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-CHAN MOSFET | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10 A | 400 mOhms | SuperFET II | |||||||
|
|
784
In-stock
|
Fairchild Semiconductor | MOSFET 500V 10A N-Channel | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 10 A | 610 mOhms | 45 nC | Enhancement | |||||
|
|
2,186
In-stock
|
IR / Infineon | MOSFET MOSFT DUAL NCh 20V 10A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 10 A | 14.6 mOhms | 2.55 V | 7.4 nC | |||||
|
|
715
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V Mdmesh 8A | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10 A | 550 mOhms | 4 V | 19 nC | Enhancement | ||||
|
|
576
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V Mdmesh 8A | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 550 mOhms | 19 nC | ||||||
|
|
517
In-stock
|
STMicroelectronics | MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 750 mOhms | 50 nC | Enhancement | |||||
|
|
821
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 325 mOhms | 2 V | 15 nC | Enhancement |
