- Mounting Style :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
32 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
402
In-stock
|
IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | |||
|
|
9,421
In-stock
|
Fairchild Semiconductor | MOSFET SSOT-6 P-CH | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.5 A | 33 mOhms | Enhancement | PowerTrench | |||||
|
|
2,024
In-stock
|
Fairchild Semiconductor | MOSFET PT5 150V/20V Nch Power Trench MOSFET | SMD/SMT | Power-56-8 | + 150 C | Reel | Si | N-Channel | 150 V | 42 A | 33 mOhms | 25 nC | PowerTrench | ||||||||
|
|
542
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 83.2 A | 33 mOhms | 2.5 V | 330 nC | Enhancement | CoolMOS | |||
|
|
206
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 83.2 A | 33 mOhms | 2.5 V | 330 nC | Enhancement | CoolMOS | |||
|
|
30
In-stock
|
IXYS | MOSFET 90 Amps 250V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | |||||||
|
|
18
In-stock
|
IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | |||
|
|
31
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 69 A | 33 mOhms | 3 V | 110 nC | Enhancement | CoolMOS | |||
|
|
2,805
In-stock
|
onsemi | MOSFET NCH 0.9V DRIVE SERIE | 5 V | SMD/SMT | SOT-323-3 | - 5 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.5 A | 33 mOhms | 300 mV | 11 nC | Enhancement | ||||
|
|
3,395
In-stock
|
Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 33 mOhms | Enhancement | ||||||
|
|
3,057
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 1496pF 14.4nC | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.5 A | 33 mOhms | - 1.1 V | 14.4 nC | Enhancement | PowerDI | |||
|
|
47
In-stock
|
IXYS | MOSFET 102 Amps 300V 0.033 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 102 A | 33 mOhms | 5 V | 224 nC | Enhancement | PolarHT | |||
|
|
20
In-stock
|
IXYS | MOSFET 102 Amps 300V 0.033 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 86 A | 33 mOhms | 5 V | 224 nC | Enhancement | PolarHV, HiPerFET | |||
|
|
4
In-stock
|
IXYS | MOSFET 850V X-Class HiPerFE Power MOSFET | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 110 A | 33 mOhms | 3.5 V | 425 nC | Enhancement | ||||
|
|
2,465
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET 40mOhm -25V -5.2A | - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 4 A | 33 mOhms | - 1.1 V | 6 nC | Enhancement | ||||
|
|
210
In-stock
|
Toshiba | MOSFET DTMOSIV 600V 40mOhm 61.8A 400W 6500pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 61.8 A | 33 mOhms | 2.7 V to 3.7 V | 180 nC | DTMOSIV | |||||
|
|
89
In-stock
|
Toshiba | MOSFET N-Ch 61.8A 400W FET 600V 3500pF 180nC | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 61.8 A | 33 mOhms | 2.7 V to 3.7 V | 180 nC | Enhancement | |||||
|
|
1,141
In-stock
|
Texas instruments | MOSFET PCh NexFET Power MOSFET | - 6 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 33 mOhms | - 800 mV | 3.4 nC | NexFET | ||||
|
|
5
In-stock
|
Toshiba | MOSFET DTMOSIV-High Speed 600V 40mOhmmax | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 61.8 A | 33 mOhms | 3.5 V | 135 nC | Enhancement | ||||
|
|
10
In-stock
|
IXYS | MOSFET 90 Amps 300V 0.033 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 90 A | 33 mOhms | 4 V | 360 nC | Enhancement | HyperFET | |||
|
|
8,995
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 U-DFN2020-6 T&R 3K | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 6 A | 33 mOhms | - 2.2 V | 23.2 nC | Enhancement | ||||
|
|
3,000
In-stock
|
onsemi | MOSFET PFET TSOP6 20V/8V TR | 8 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.1 A | 33 mOhms | Enhancement | ||||||
|
|
3,000
In-stock
|
onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-26-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 6 A | 33 mOhms | 1.2 V | 20 nC | Enhancement | |||||
|
|
8,000
In-stock
|
IXYS | MOSFET 102 Amps 300V 0.033 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 102 A | 33 mOhms | 5 V | 224 nC | Enhancement | PolarHT, HiPerFET | |||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 5.2 A | 33 mOhms | Enhancement | OptiMOS | |||||
|
|
VIEW | IXYS | MOSFET 300V 90A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 90 A | 33 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 60 Amps 200V 0.033 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 60 A | 33 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 72 Amps 200 V 0.033 W Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 33 mOhms | Enhancement | ||||||
|
|
VIEW | IXYS | MOSFET 72 Amps 200V 0.033 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 33 mOhms | Enhancement | ||||||
|
|
VIEW | IXYS | MOSFET 60 Amps 150V 0.033 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 60 A | 33 mOhms | Enhancement |
