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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Packaging | Operating Supply Voltage | Memory Size | Interface Type | Organization | |
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Toshiba | EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | BGA-63 | - 40 C | + 85 C | TH58BYG2S3 | Tray | 1.8 V | 4 Gbit | Parallel | 512 M x 8 |
