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9 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Series Packaging Operating Supply Voltage Memory Size Maximum Clock Frequency Interface Type Organization Supply Current - Max
TC58NVG0S3HBAI6
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RFQ
551
In-stock
Toshiba EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM SMD/SMT VFBGA-67     TC58NVG0S3 Tray   1 Gbit - Parallel 128 M x 8 30 mA
TC58NVG2S0HBAI6
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RFQ
1,065
In-stock
Toshiba EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM SMD/SMT VFBGA-67 - 40 C + 85 C TC58NVG2S0 Tray 3.3 V 4 Gbit - Parallel 512 M x 8 30 mA
TC58BYG1S3HBAI6
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RFQ
392
In-stock
Toshiba EEPROM 1.8V, 2 Gbit CMOS NAND EEPROM SMD/SMT VFBGA-67     TC58BYG1S3 Tray   2 Gbit - Parallel 256 M x 8 30 mA
TC58NYG1S3HBAI6
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RFQ
475
In-stock
Toshiba EEPROM 1.8V, 2 Gbit CMOS NAND EEPROM SMD/SMT VFBGA-67     TC58NYG1S3 Tray   2 Gbit - Parallel 256 M x 8 30 mA
TC58BYG2S0HBAI6
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RFQ
413
In-stock
Toshiba EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM SMD/SMT VFBGA-67 - 40 C + 85 C TC58BYG2S0 Tray 1.8 V 4 Gbit - Parallel 512 M x 8 30 mA
TC58NYG2S0HBAI6
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RFQ
354
In-stock
Toshiba EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM SMD/SMT VFBGA-67 - 40 C + 85 C TC58NYG2S0 Tray 1.8 V 4 Gbit - Parallel 512 M x 8 30 mA
TC58NVG1S3HBAI6
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RFQ
349
In-stock
Toshiba EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM SMD/SMT VFBGA-67     TC58NVG1S3 Tray   2 Gbit - Parallel 256 M x 8 30 mA
TC58NYG0S3HBAI6
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RFQ
359
In-stock
Toshiba EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM SMD/SMT VFBGA-67     TC58NYG0S3 Tray   1 Gbit - Parallel 128 M x 8 30 mA
TC58BVG0S3HBAI6
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RFQ
96
In-stock
Toshiba EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM SMD/SMT VFBGA-67     TC58BVG0S3 Tray   1 Gbit - Parallel 128 M x 8 30 mA
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