- Packaging :
- Input Type :
- Part Status :
- Driven Configuration :
- Logic Voltage - VIL, VIH :
- Current - Peak Output (Source, Sink) :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Input Type | Mounting Type | Operating Temperature | Part Status | Voltage - Supply | Supplier Device Package | Factory Stock | Minimum Quantity | Channel Type | Driven Configuration | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
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VIEW | Infineon Technologies | IC DVR CURR SENSE 1CH 600V 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Inverting | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | 9 V ~ 20 V | 8-SOIC | 0 | 285 | Single | High-Side | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 80ns, 40ns | |||
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VIEW | Infineon Technologies | IC DVR CURRENT SENSE 1CH 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Inverting | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | 9 V ~ 20 V | 8-SOIC | 0 | 2500 | Single | High-Side | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 80ns, 40ns | |||
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VIEW | Infineon Technologies | IC DVR CURR SENSE 1CH 600V 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | Active | 9 V ~ 20 V | 8-SOIC | 0 | 3800 | Single | High-Side | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 80ns, 40ns | |||
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VIEW | Infineon Technologies | IC DVR CURRENT SENSE 1CH 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | Active | 9 V ~ 20 V | 8-SOIC | 0 | 2500 | Single | High-Side | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 80ns, 40ns | |||
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1,292
In-stock
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Infineon Technologies | IC DRIVER 1CHAN HV 600V 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | Active | 9 V ~ 20 V | 8-SOIC | 0 | 1 | Single | High-Side or Low-Side | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600V | 80ns, 40ns |
