- Mounting Type :
- Operating Temperature :
- Supplier Device Package :
- Channel Type :
- Driven Configuration :
- Logic Voltage - VIL, VIH :
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54 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Input Type | Number of Drivers | Mounting Type | Operating Temperature | Part Status | Voltage - Supply | Supplier Device Package | Factory Stock | Minimum Quantity | Channel Type | Driven Configuration | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
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VIEW | Infineon Technologies | IC GATE DRVR HALF-BRIDGE 44PLCC | - | - | Bulk | Non-Inverting | 6 | Surface Mount | -40°C ~ 125°C (TA) | Obsolete | 12 V ~ 20 V | 44-PLCC | 0 | 1 | 3-Phase | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | 200mA, 350mA | 600V | - | |||
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VIEW | Infineon Technologies | IC GATE DRVR HALF-BRIDGE 44PLCC | - | - | Tape & Reel (TR) | Non-Inverting | 6 | Surface Mount | -40°C ~ 125°C (TA) | Obsolete | 12 V ~ 20 V | 44-PLCC | 0 | 1 | 3-Phase | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | 200mA, 350mA | 600V | - | |||
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VIEW | Microchip Technology | IC MOSFET DVR 3A L-SIDE 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | Automotive, AEC-Q100 | Cut Tape (CT) | Non-Inverting | 2 | Surface Mount | -40°C ~ 125°C (TJ) | Discontinued at Digi-Key | 4.5 V ~ 20 V | 8-SOIC-EP | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 3A, 3A | - | 11ns, 11ns | |||
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VIEW | Microchip Technology | IC MOSFET DVR 3A L-SIDE 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | Automotive, AEC-Q100 | Cut Tape (CT) | Inverting, Non-Inverting | 2 | Surface Mount | -40°C ~ 125°C (TJ) | Discontinued at Digi-Key | 4.5 V ~ 20 V | 8-SOIC-EP | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 3A, 3A | - | 11ns, 11ns | |||
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20
In-stock
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Microchip Technology | IC MOSFET DVR 4.0A DUAL 8DFN | 8-VDFN Exposed Pad | - | Tube | Non-Inverting | 2 | Surface Mount | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-DFN-S (6x5) | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | - | 15ns, 18ns | |||
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2
In-stock
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Microchip Technology | IC MOSFET DRIVER 2A 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Inverting | 2 | Through Hole | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-PDIP | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | - | 12ns, 15ns | |||
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12
In-stock
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Microchip Technology | IC MOSFET DRIVER 3A 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Inverting | 2 | Through Hole | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-PDIP | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 3A, 3A | - | 14ns, 17ns | |||
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3
In-stock
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Microchip Technology | IC MOSFET DVR 6A 8DFN | 8-VDFN Exposed Pad | - | Tube | Inverting | 1 | Surface Mount | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-DFN-S (6x5) | 0 | 1 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 6A, 6A | - | 20ns, 20ns | |||
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22
In-stock
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Microchip Technology | IC MOSFET DRIVER 2A 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | 2 | Through Hole | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-PDIP | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | - | 12ns, 15ns | |||
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105
In-stock
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Microchip Technology | IC MOSFET DRIVER 2A 8DFN-S | 8-VDFN Exposed Pad | - | Tube | Non-Inverting | 2 | Surface Mount | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-DFN-S (6x5) | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | - | 12ns, 15ns | |||
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110
In-stock
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Microchip Technology | IC MOSFET DRIVER 2A 8DFN-S | 8-VDFN Exposed Pad | - | Tube | Inverting | 2 | Surface Mount | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-DFN-S (6x5) | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | - | 12ns, 15ns | |||
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47
In-stock
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Microchip Technology | IC MOSFET DRIVER 3A 8DFN-S | 8-VDFN Exposed Pad | - | Tube | Inverting | 2 | Surface Mount | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-DFN-S (6x5) | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 3A, 3A | - | 14ns, 17ns | |||
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70
In-stock
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Microchip Technology | IC MOSFET DRIVER 3A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Inverting | 2 | Surface Mount | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-SOIC | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 3A, 3A | - | 14ns, 17ns | |||
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954
In-stock
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Microchip Technology | IC MOSFET DVR 3A L-SIDE 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | Automotive, AEC-Q100 | Cut Tape (CT) | Inverting | 2 | Surface Mount | -40°C ~ 125°C (TJ) | Discontinued at Digi-Key | 4.5 V ~ 20 V | 8-SOIC-EP | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 3A, 3A | - | 11ns, 11ns | |||
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18
In-stock
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Power Integrations | IC SINGLE GATE DRIVER 60A | Module | SCALE™-2 | Bulk | - | 1 | Surface Mount | -40°C ~ 85°C (TA) | Active | 14.5 V ~ 15.5 V | Module | 0 | 1 | Single | High-Side or Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | 60A, 60A | - | 10ns, 15ns | |||
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242
In-stock
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Texas instruments | 700V GATE DRIVER- 0.5A/1A PEAK C | 8-SOIC (0.154", 3.90mm Width) | - | Tube | - | 2 | Surface Mount | -40°C ~ 125°C (TA) | Active | 10 V ~ 20 V | 8-SOIC | 0 | 1 | Independent | High-Side or Low-Side | IGBT, N-Channel, P-Channel MOSFET | 1.2V, 2V | 500mA, 1A | 600V | 35ns, 16ns | |||
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52
In-stock
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Microchip Technology | IC MOSFET DVR 4.5A DUAL 16SOIC | 16-SOIC (0.295", 7.50mm Width) | - | Tube | Non-Inverting | 2 | Surface Mount | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 16-SOIC | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4.5A, 4.5A | - | 15ns, 18ns | |||
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100
In-stock
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Microchip Technology | IC MOSFET DVR 4.0A DUAL 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Inverting, Non-Inverting | 2 | Through Hole | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-PDIP | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | - | 15ns, 18ns | |||
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300
In-stock
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Microchip Technology | IC MOSFET DRIVER 2A 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Inverting, Non-Inverting | 2 | Through Hole | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-PDIP | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | - | 12ns, 15ns | |||
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187
In-stock
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Microchip Technology | IC MOSFET DRIVER 3A 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | 2 | Through Hole | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-PDIP | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 3A, 3A | - | 25ns, 25ns | |||
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290
In-stock
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Microchip Technology | IC MOSFET DRIVER 2A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Inverting, Non-Inverting | 2 | Surface Mount | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-SOIC | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | - | 12ns, 15ns | |||
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185
In-stock
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Microchip Technology | IC MOSFET DRIVER 3A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Inverting, Non-Inverting | 2 | Surface Mount | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-SOIC | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 3A, 3A | - | 25ns, 25ns | |||
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256
In-stock
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Microchip Technology | IC MOSFET DVR 4.0A DUAL 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Inverting | 2 | Through Hole | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-PDIP | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | - | 15ns, 18ns | |||
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270
In-stock
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Microchip Technology | IC MOSFET DRIVER 3A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Non-Inverting | 2 | Surface Mount | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-SOIC | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 3A, 3A | - | 25ns, 25ns | |||
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290
In-stock
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Microchip Technology | IC MOSFET DVR 4.5A DUAL 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Inverting | 2 | Through Hole | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-PDIP | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4.5A, 4.5A | - | 15ns, 18ns | |||
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300
In-stock
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Microchip Technology | IC MOSFET DVR 4.0A DUAL 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Inverting | 2 | Surface Mount | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-SOIC | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | - | 15ns, 18ns | |||
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300
In-stock
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Microchip Technology | IC MOSFET DRIVER 2A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Inverting | 2 | Surface Mount | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-SOIC | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | - | 12ns, 15ns | |||
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300
In-stock
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Microchip Technology | IC MOSFET DVR 6A TO220-5 | TO-220-5 | - | Tube | Inverting | 1 | Through Hole | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | TO-220-5 | 0 | 1 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 6A, 6A | - | 20ns, 20ns | |||
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26
In-stock
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Microchip Technology | IC MOSFET DRIVER 3A 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Inverting, Non-Inverting | 2 | Through Hole | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-PDIP | 0 | 1 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 3A, 3A | - | 25ns, 25ns | |||
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238
In-stock
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Microchip Technology | IC MOSFET DVR 6A 8DFN | 8-VDFN Exposed Pad | - | Tube | Non-Inverting | 1 | Surface Mount | -40°C ~ 150°C (TJ) | Active | 4.5 V ~ 18 V | 8-DFN-S (6x5) | 0 | 1 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 6A, 6A | - | 20ns, 20ns |
