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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Configuration | Technology | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Emitter- Base Voltage VEBO | DC Collector/Base Gain hfe Min | Continuous Collector Current | Transistor Type | |
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73
In-stock
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MACOM | RF Bipolar Transistors 30-200MHz 30Watts 28Volt Gain 10dB | Screw | Case 211-07 | + 150 C | Tray | Single | Si | NPN | 35 V | 4 V | 20 | 3.4 A | Bipolar Power | ||||
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320
In-stock
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MACOM | RF Bipolar Transistors 1.5-30MHz 25Watts 28Volt Gain 22dB | Screw | Case 211-07 | + 150 C | Tray | Single | Si | NPN | 35 V | 4 V | 10 | 3 A | Bipolar Power | |||
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4
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Screw | M111 | + 150 C | Tray | Single Dual Emitter | Si | NPN | 35 V | 4 V | 10 | 10 A | Bipolar Power | ||||
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2
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Screw | M113 | + 150 C | Tray | Single Dual Emitter | Si | NPN | 35 V | 4 V | 5 | 5 A | Bipolar Power | ||||
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VIEW | ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Screw | M113 | + 150 C | Tray | Single Dual Emitter | Si | NPN | 35 V | 4 V | 10 | 1 A | Bipolar Power | ||||
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15
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Screw | M175 | + 150 C | Tray | Single | Si | NPN | 35 V | 3 V | 20 | 25 A | Bipolar Power |