- Package / Case :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Technology | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Emitter- Base Voltage VEBO | DC Collector/Base Gain hfe Min | Continuous Collector Current | Transistor Type | |
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16
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | + 200 C | Tray | Si | NPN | 55 V | 4 V | 15 | 10 A | Bipolar Power | ||||
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11
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | MT72 | + 200 C | Tray | Si | NPN | 35 V | 4 V | 5 | 5 A | Bipolar Power | |||
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8
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | Case 145A-09 | + 200 C | Tray | Si | NPN | 35 V | 4 V | 5 | 5 A | Bipolar Power | |||
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8
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | Case244-04 | + 200 C | Tray | Si | NPN | 33 V | 4 V | 20 | 2.2 A | Bipolar Power | |||
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6
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | SOT-122A | + 200 C | Tray | Si | NPN | 30 V | 4 V | 15 | 3 A | Bipolar Power | |||
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9
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | Case244-04 | + 200 C | Tray | Si | NPN | 33 V | 4 V | 10 | 2 A | Bipolar Power | |||
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1
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | M135 | + 200 C | Tray | Si | NPN | 18 V | 4 V | 35 | 1 A | Bipolar Power | |||
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VIEW | ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | SOT-147 | + 200 C | Tray | Si | NPN | 33 V | 4 V | 15 | 12.5 A | Bipolar Power | |||
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VIEW | ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | SOT-122A | + 200 C | Tray | Si | NPN | 30 V | 4 V | 20 | 1 A | Bipolar Power | |||
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VIEW | ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | + 200 C | Tray | Si | 75 V | 4 V | 25 | 15 A | Bipolar Power | |||||
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VIEW | ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | SOT-120 | + 200 C | Tray | Si | NPN | 36 V | 4 V | 10 | 3 A | Bipolar Power |