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Pd - Power Dissipation :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Transistor Type
J174,126
10000+
$0.235
20000+
$0.225
50000+
$0.222
VIEW
RFQ
NXP Semiconductors RF JFET Transistors AMMORA FET-RFSS Through Hole TO-92 + 150 C Ammo Pack 300 mW Si P-Channel 30 V 135 mA JFET
J111,126
10000+
$0.235
20000+
$0.225
50000+
$0.222
VIEW
RFQ
NXP Semiconductors RF JFET Transistors N-Channel Single 40V 20mA Through Hole TO-92   Ammo Pack 400 mW Si N-Channel 40 V 20 mA JFET
J176,126
10000+
$0.235
20000+
$0.225
50000+
$0.222
VIEW
RFQ
NXP Semiconductors RF JFET Transistors J176/TO-92/STANDARD MARKING * Through Hole SC-43 (TO-92) + 150 C Ammo Pack 300 mW Si P-Channel 30 V 35 mA JFET
J110,126
10000+
$0.235
20000+
$0.225
50000+
$0.222
VIEW
RFQ
NXP Semiconductors RF JFET Transistors N-Channel Single '+/- 25V 80mA Through Hole TO-92   Ammo Pack 400 mW Si N-Channel 25 V 10 mA JFET
J108,126
10000+
$0.235
20000+
$0.225
50000+
$0.222
VIEW
RFQ
NXP Semiconductors RF JFET Transistors N-Channel Single '+/- 25V 80mA Through Hole TO-92   Ammo Pack 400 mW Si N-Channel 25 V 80 mA JFET
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