- Mounting Style :
- Package / Case :
- Pd - Power Dissipation :
- Id - Continuous Drain Current :
- Gain :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
23
In-stock
|
Qorvo | RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN | SMD/SMT | NI-360 | + 85 C | Tray | 162 W | 127 W | GaN SiC | N-Channel | 50 V | 4 A | 145 V | 17.5 dB | HEMT | |||
|
|
25
In-stock
|
Qorvo | RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN | SMD/SMT | NI-360 | + 85 C | Tray | 70 W | 64 W | GaN SiC | N-Channel | 50 V | 2.5 A | 145 V | 20 dB | HEMT | |||
|
|
3
In-stock
|
Qorvo | RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN | SMD/SMT | RF-565 | + 85 C | Tray | 540 W | 370 W | GaN SiC | N-Channel | 50 V | 15 A | 145 V | 19.9 dB | HEMT | |||
|
|
28
In-stock
|
Qorvo | RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN | Screw | NI-360 | + 85 C | Tray | 70 W | 64 W | GaN SiC | N-Channel | 50 V | 2.5 A | 145 V | 20 dB | HEMT | |||
|
|
25
In-stock
|
Qorvo | RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN | Screw | NI-360 | + 85 C | Tray | 162 W | 127 W | GaN SiC | N-Channel | 50 V | 4 A | 145 V | 17.5 dB | HEMT | |||
|
|
35
In-stock
|
Qorvo | RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN | SMD/SMT | QFN-16 | + 85 C | Tray | 17 W | 17.5 W | GaN SiC | N-Channel | 50 V | 700 mA | 145 V | 24 dB | HEMT |