1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | |
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MACOM | RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN | Screw | + 200 C | Tray | 44 W | GaN Si | N-Channel | 100 V | 4 mA | 3 V | 13 dB | HEMT |
