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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Gain | Transistor Type | Maximum Drain Gate Voltage | |
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150
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Qorvo | RF JFET Transistors DC-12GHz 55W 32V GaN P3dB @ 3GHz 47.6dBm | SMD/SMT | Die | + 150 C | Waffle | 47.6 dBm | 53 W | GaN SiC | N-Channel | 32 V | 3.5 A | 19.3 dB | HEMT | 100 V |
